The IRF5305PBF is a P-Channel Power MOSFET manufactured by Infineon Technologies. Below are the detailed specifications for this component:
- Part Number: IRF5305PBF
- Transistor Polarity: P-Channel
- Drain-Source Voltage (Vdss): -55V
- Continuous Drain Current (Id): -31A
- Rds On (Max) @ Id, Vgs: 0.040 Ohm @ 25A, 10V
- Vgs (Max): ±20V
- Mounting Type: Through Hole
- Package / Case: TO-220AB
- Supplier Device Package: TO-220AB
- Operating Temperature: -55°C ~ 175°C (TJ)
Description:
The IRF5305PBF is a P-Channel Power MOSFET designed for general-purpose power switching applications. The P-Channel MOSFET conducts when a negative voltage is applied to the gate relative to the source.
Application:
P-Channel MOSFETs are often used in applications such as power management, load switching, motor control, and other electronic systems where low on-state resistance, high current capability, and fast switching speeds are essential.
Package:
The TO-220AB package is a through-hole mounting style, commonly used for discrete semiconductors. It allows for easy and reliable mounting to printed circuit boards or heat sinks.
Features:
- High Drain-Source Voltage: Suitable for applications where a higher voltage capacity is required.
- Low On-State Resistance: Provides efficient power management and reduced power losses.
- High Current Capability: Capable of handling high currents, making it suitable for various power applications.
Please note that careful attention must be paid to the datasheet and the specific requirements of your project to ensure this MOSFET is suitable for your application.
| DataSheet | IRF5305PBF PDF |
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